审稿意见及回复 第 1 位审稿人的意见：综述论文从晶体结构出发，讨论了元素掺杂、缺陷、应力、表面和界面 等如何稳定 hfo 薄膜的亚稳态 oiii 铁电相并增强其铁电极化。论文总结了铁电存储器等 基薄膜的几种典型应用，分析了 基薄膜当前的挑战和机遇。论文对希望了解 基铁电

HIGHLIGHTS

• who: wang shen from the (School of Material Science and Engineering, Nanjing University of Science and, Nanjing , have published the Article: u5ba1u7a3fu610fu89c1u53cau56deu590d u7b2c 1 u4f4du5ba1u7a3fu4ebau7684u610fu89c1uff1au7efcu8ff0u8bbau6587u4eceu6676u4f53u7ed3u6784u51fau53d1uff0cu8ba8u8bbau4e86u5143u7d20u63bau6742u3001u7f3au9677u3001u5e94u529bu3001u8868u9762u548cu754cu9762 u7b49u5982u4f55u7a33u5b9a HfO u8584u819cu7684u4e9au7a33u6001 OIII u94c1u7535u76f8u5e76u589eu5f3au5176u94c1u7535u6781u5316u3002u8bbau6587u603bu7ed3u4e86u94c1u7535u5b58u50a8u5668u7b49 u57fau8584u819cu7684u51e0u79cdu5178u578bu5e94u7528uff0cu5206u6790u4e86 u57fau8584u819cu5f53u524du7684u6311u6218u548cu673au9047u3002u8bbau6587u5bf9u5e0cu671bu4e86u89e3 u57fau94c1u7535, in the Journal: (JOURNAL)
• how: This paper introduces the ferroelectric origin of HfO2-based ferroelectric films and explains how element doping defects stresses surfaces and interfaces regulate and enhance the ferroelectric polarization of the films.

SUMMARY

This paper introduces the ferroelectric origin of HfO2-based ferroelectric films and explains how element doping, defects, stresses, surfaces and interfaces regulate . . .

 



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