HIGHLIGHTS
- who: uff1a and colleagues from the South China Normal University, Guangzhou, China) have published the Article: u9499u949bu77ffu76f8u754cu9762u63d2u5c42u5bf9 SrFeO u57fau5fc6u963bu5668u7684u6027u80fdu63d0u5347, in the Journal: (JOURNAL)
- what: This study provides a new approach to modulating the performance of SFO-based memristors and demonstrates their great potential as artificial synaptic devices to be used in neuromorphic computing.
SUMMARY
72, No 9 such as a small number of resistance states, large resistance fluctuation, and high nonlinearity under pulse writing. To solve these problems, a BM-SFO/PV-SFO double-layer memristor is designed in this work . . .
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