HIGHLIGHTS
- who: Cubo Multimídia from the Physics Department, FC, São Paulo State University, UNESP, Bauru, SP, Brazil have published the Article: 1. Introduction, in the Journal: (JOURNAL)
- what: In this work the obtained knowledge is used for the construction of a heterojunction between Heterojunction between Al2O3 and SnO2 Thin Films for Application in Transparent FET alumina thin films and SnO2, which is used for building a simple device for electrical characterization. For transformation to aluminum oxide, the metallic aluminum films were oxidized during thermal annealing (TA) at 550 °C. Films deposited on soda-lime . . .
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