12(1): 196-206 10-1154/tq achieving high energy storage density in ag(nb ta)o3 antiferroelectric films via nanograin engineering

HIGHLIGHTS

• who: AgNbO and colleagues from the Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of (Shandong Academy of Sciences), Jinan, China have published the article: 12(1): 196-206 10-1154/TQ Achieving high energy storage density in Ag(Nb Ta)O3 antiferroelectric films via nanograin engineeringuf020, in the Journal: (JOURNAL)
• what: In this work a highly efficient method was proposed to fabricate high-energy-density Ag(Nb Ta)O3 capacitor films on Si substrates using a two-step process combining radio frequency (RF)-magnetron sputtering at u2103 . . .
  

   

  

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