3-d stacked polycrystalline-silicon-mosfet-based capacitorless dram with superior immunity to grain-boundary’s influence

HIGHLIGHTS

• who: Sang Ho Lee from the SchoolNational University have published the article: 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundaryu2019s influence, in the Journal: Scientific Reports Scientific Reports
• what: In this work, the 3-D stacked ADG poly-Si MOSFET based 1T-DRAM with various average grain sizes (Gsizes) cells are investigated.

SUMMARY

A TCAD simulation is used to demonstrate the superior reliability of 3-D stacked ADG 1T-DRAM to the effects of the G ­ Bs11. The proposed 3-D stacked ADG 1T . . .

 



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