HIGHLIGHTS
- who: Gabriel Ferro and colleagues from the Laboratoire des Multimatu00e9riaux et Interfaces, UMR CNRS, Victor Grignard, Lyon, (France) have published the research work: 3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations, in the Journal: (JOURNAL)
- what: This work investigates the 3C-SiC heteroepitaxial growth on silicon substrates having a wide variety of i.e. on axis and 2u00b0off and_(995).
- future: More experimental and theoretical work is required for correlating these orientations with the bow.
SUMMARY
Silicon Carbide and Related Materials 2021 Si(100) substrate at . . .
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