HIGHLIGHTS
- who: Stéphane Bastide from the Institut de Chimie et des Paris-Est (UMR, ), CNRS, UPEC, Université Est, Thiais, France, Institut Arizona State University, United States have published the article: 3D Patterning of Si by Contact Etching With Nanoporous Metals, in the Journal: (JOURNAL)
- what: The authors show this time that a complete transfer of complex patterns can be obtained in n-type silicon by contact etching, either electrochemically or chemically. With pyramids, "damaged tips" was the main reason for overruling an electrode.
- how: The highlights that can be drawn from these results . . .
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