4h-sic-based esd protection design with optimization of segmented ligbt for high-voltage applications

HIGHLIGHTS

• who: KYOUNG-IL (Graduate Student Member and collaborators from the Department of Electronics and Electrical Engineering, Dankook University, Yongin, Gyeonggi, Republic of Korea have published the Article: 4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications, in the Journal: (JOURNAL)
• what: In this study an ESD protection device based on a lateral insulated-gate bipolar transistor (LIGBT) with a new structure that creates an internal silicon-controlled rectifier (SCR) path is proposed. This study proposes an LIGBT-based protection device to improve the snapback phenomenon occurring in 4H-SiC . . .
  

   

  

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