HIGHLIGHTS
- who: Dominique Planson and colleagues from the AMPERE, France have published the research work: 4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method, in the Journal: (JOURNAL)
- how: This paper presents measurements performed at different voltages on two devices protected by narrow field rings. In this paper micro-OBIC technique is applied to SiC high voltage bipolar diodes where the design of the guard rings is more tightly constrained to analyze the experimental behavior of the periphery protection with respect to the applied reverse voltage.
- future: More . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.