HIGHLIGHTS
- who: Yara Galvão Gobato from the Universidade Federal de São Carlos, Departamento de Física, São Carlos, SP, Brazil , have published the Article: Hole spin injection from a GaMnAs layer into GaAs-AlAs- InGaAs resonant tunneling diodes, in the Journal: (JOURNAL)
- what: The authors demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spinpolarized source for holes tunneling through the device.
SUMMARY
The authors have investigated the polarization-resolved electroluminescence (EL) of a pi-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing . . .
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