Fine structure in the optical-absorption edge of silicon

HIGHLIGHTS

• who: C. Anagnostopoulos and G. Sadasiv from the University of have published the Article: Fine Structure in the Optical-Absorption Edge of Silicon, in the Journal: (JOURNAL) of 15/01/1973
• what: The authors have investigated the dependence of the photocurrent generated in silicon p-n junctions on the energy of the incident photons. The observed energies of the structure in this work do not correlate well with the known levels introduced by the impurities.
• how: The monochromator which was used in the experiments had a linear wavelength scale. Although the effect of . . .
  

   

  

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