Three-dimensional heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (ga,mn)as

HIGHLIGHTS

• who: Mn)As and collaborators from the SchoolUniversity of, Nottingham , RD, United Kingdom have published the article: Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As, in the Journal: (JOURNAL) of 16/05/2016
• what: Materials with high Mn concentration and high TC, such as those used in the present studies, show strong uniaxial behavior at all temperatures. To test the sensitivity of the value of β obtained from the Kouvel-Fisher plots, the authors show in Fig 4 the effect of changing the reduced temperature (t) fitting range on . . .
  

   

  

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