The growth of ga2o3 nanowires on silicon for ultraviolet photodetector

HIGHLIGHTS

• who: Badriyah Alhalaili and collaborators from the Electrical and Computer Engineering, University of California at Davis, Davis, CA, USA have published the Article: The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector, in the Journal: (JOURNAL)
• what: The authors proposed the growth of β-Ga2 O3 nanowires on P+ -silicon substrate by thermal oxidation at 950 ◦ C using an Ag catalyst. Diffusion appears to be due the high capability of Ag to absorb oxygen, and it isofgreatly by the variation of temperature. to the high capability of Ag to oxygen, and it (D) is greatly . . .
  

   

  

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