HIGHLIGHTS
- who: Yuan Li and colleagues from the Institute of Semiconductor Science and Technology, South China Normal University, Zhongshan have published the paper: Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure, in the Journal: Micromachines 2022, 1273 of /2022/
- what: In this Article an innovative GaN-based trench current-aperture vertical electron transistor (CAVET) with a stepped doping microstructure is proposed and studied using Silvaco-ATLAS. The aim of this paper is to design a reliable GaN-based CAVET model to explore and predict the influence of nonuniform profile doping in the . . .
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