Nanoscale nitrogen doping in silicon by self-assembled monolayers

HIGHLIGHTS

• who: Bin Guan from the University of have published the Article: Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers, in the Journal: Scientific Reports Scientific Reports
• what: In this Report the authors investigate the properties of nitrogen doping by SAMs that carry doping elements such as phosphorus and nitrogen. The authors demonstrate the successful doping of nitrogen and phosphorus in intrinsic silicon wafer, extract the diffusion coefficients for both dopants and estimate the donor energy levels in the monolayer doped silicon samples.

SUMMARY

| 5:12641 | ultra-shallow junctions using dopants . . .

 



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