HIGHLIGHTS
- who: Shujing Jia from the Shanghai Institute Shanghai, China, University have published the research work: Ultrahigh drive current and large selectivity in GeS selector, in the Journal: NATURE COMMUNICATIONS NATURE COMMUNICATIONS of 19/04/2020
- what: The reason of the existence of Ge-Ge chains has recently been provided with a formation energy using an amorphous GeTe model generated by atomic distortion58. The authors demonstrate that simple, toxic-free GeS OTS device could yield 34 MA cm-2 large drive current density and ~106 high nonlinearity for potential 3D stackable memory and neuromorphic applications. This . . .
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