HIGHLIGHTS
- who: V. Milo and colleagues from the Italy DptoElectricidad, Universidad de Valladolid, Paseo de Belén, Valladolid, Spain have published the research work: Multilevel HfO2-based RRAM devices for low-power neuromorphic networks, in the Journal: (JOURNAL)
- what: The authors study the material device and architecture aspects of resistive switching memory (RRAM) devices for implementing a 2-layer neural network for pattern recognition. The authors report the hardware implementation of a 2layer perceptron neural_network in a 4 kbit array of HfO2 -based RRAM devices with one-transistor/one-resistor (1T1R) structure capable of multilevel operation . . .
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