Normally-off -ga2o3 mosfet with an epitaxial drift layer

HIGHLIGHTS

• who: Chan-Hee Jang et al. from the School of Electrical and Electronic Engineering, Hongik University, Mapo-gu, Seoul, Korea have published the Article: Normally-off -Ga2O3 MOSFET with an Epitaxial Drift Layer, in the Journal: Micromachines 2022, 2022, 13, 13, 1185 x FOR PEER0.04 REVIEW Micromachines of /2022/
• what: The authors propose a recessed β-Ga2 O3 MOSFET with an epitaxial drift layer on top of a low-doped body layer to overcome the trade-off relationship between the threshold voltage and on-current density.
• how: In this study a highly doped . . .
  

   

  

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