HIGHLIGHTS
- who: ALP Inc. from the (UNIVERSITY) have published the paper: Study of Dopant Activation in Silicon Employing Differential Hall Effect Metrology (DHEM), in the Journal: (JOURNAL)
- what: DHEM was used to generate depth profiles of resistivity, mobility and carrier concentration through highly P-doped Si epi layers.
SUMMARY
I carrier concentration, resistivity and mobility. Dopant concentration was graded such that for Samples A-700 and A-900, the doping increased from about 2E21 #/cm3 at near-junction region to about 3E21 #/cm3 near the surface. For Samples B-700 and B . . .
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