HIGHLIGHTS
- who: Hf and collaborators from the Department University of United Kingdom have published the article: Schottky-to-Ohmic switching in ferroelectric memristors based on semiconducting Hf0.93Y0.07O2 thin films, in the Journal: (JOURNAL)
- what: The authors demonstrate ferroelectricity in the films and observe ferroelectric resistive switching and memristive behavior in the MFM device configuration.
- future: The presence of oxygen vacancies can result in mixed electrochemical-ferroelectric states at the nanoscale which has been recently observed also in FTJs44 and might be interesting for future work on ultrathin semiconducting ferroelectric films.
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