Persistent m2 phase in strongly strained (011)-oriented grains in vo2 films grown on sapphire (001) in reactive sputtering

HIGHLIGHTS

• who: Kohei Matsuoka from the Graduate School of Engineering, Tokai University, Hiratsuka, Japan have published the research: Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering, in the Journal: (JOURNAL)
• what: The authors report on the first observation of the persistent M2 phase in strongly strained -oriented grains in VO2 films grown on Al2O3 substrates by means of conventional rf reactive sputtering under adequate deposition conditions. The authors demonstrate that the -oriented grains underwent SPT with a persistent M2 phase over 30 °C through the . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.