HIGHLIGHTS
- who: Juhyun Lee and colleagues from the Hanyang University have published the research work: Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer, in the Journal: (JOURNAL) of 27/02/2017
- what: The authors report the effect of zirconium oxide (ZrO2 ) layers on the electrical characteristics of multilayered tin disulfide (SnS2 ) formed by atomic layer deposition (ALD) at low temperatures. The aim of this study is to apply this LMDs to large scale integrations and flexible electronics at low temperatures . This research is focused on the use of layered . . .
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