HIGHLIGHTS
- who: HP from the Faculty of Information Science and Technology, Ningbo University, Zhejiang, China have published the research work: Research Journal of Applied Sciences, Engineering and Technology 5(21): 4977-4982, 2013 DOI:10.19026/rjaset.5.4384 ISSN: 2040-7459; e-ISSN: 2040-7467 © 2013 Maxwell Scientific Publication Corp. Submitted: July 31, 2012 Accepted: September 17, 2012 Published: May 20,, in the Journal: (JOURNAL)
- what: The authors propose a P-type energy recovery logic named as 2P-2P2N to reduce the leakage dissipations in nanometer CMOS processes with gate oxide materials.
SUMMARY . . .
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