HIGHLIGHTS
- who: SHUAI LI and collaborators from the School of Electronic Information Engineering, Soochow University, Suzhou, China have published the Article: A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination, in the Journal: (JOURNAL)
- what: In this study, instabilities of a-IGZO TFTs under both NBS and NBIS are investigated for different stress gate biases (V G ), temperatures (T) and light intensities (I) systematically. The authors propose that some residual water (H2 O) molecules unintentionally introduced from fabrication processes may accumulate at the channel/GI interface and react . . .
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