HIGHLIGHTS
- who: Yuchen Li and colleagues from the Institute of Microelectronics of Chinese Academy of Sciences, Beijing, ChinaUniversity of Chinese Academy of Sciences, Beijing, China have published the research: Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier, in the Journal: Electronics 2022, 11, 1331. of /2022/
- what: In this work, the ON-state breakdown loci of AlGaN/GaN HEMTs with an AlGaN back barrier were studied with the gate current extraction technique, and the impact ionization of acceptor-like traps was observed within the temperature range from 40 to -30 . . .
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