Ge-sb-s-se-te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices

HIGHLIGHTS

• who: J.-B. Dory from the Université have published the Article: Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices, in the Journal: Scientific Reports Scientific Reports
• what: In this study, all deposition were made using the same Ar flow and the deposition pressure was kept at 5.10-3 mBar.

SUMMARY

S( Se (at.% ) Ge (at.%) 100 Te 52 Ge (at 63 S Ge 100 Sb Sb (c) (at.% ) (b) Ge30Se70 (at.%) Ge30Se70 (at.%) 1‑xSbx, ­[Ge37S63]1‑xSbx and ­[Ge37S63]1‑x- xSby . . .

 



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