Low defect ingaas quantum well selectively grown by mocvd on si(100) 300 mm wafers for next generation non planar devices

HIGHLIGHTS

• who: R. Cipro and collaborators from the UnivGrenoble Alpes, LTM, France CNRS, LTM, Grenoble, France , Univ. Grenoble Alpes, France CEA-LETI, MINATEC Campus, Grenoble, France , Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, Universit have published the research: Low defect InGaAs quantum well selectively grown by MOCVD on Si(100) 300 mm wafers for next generation non planar devices, in the Journal: (JOURNAL) of 29/06/2021
• what: The authors have studied the ART selective epitaxy by metal organic chemical vapor deposition (MOCVD) of GaAs/InGaAs/AlGaAs multilayers in SiO2 cavity with a . . .
  

   

  

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