HIGHLIGHTS
- who: Jing Guo and collaborators from the Purdue University have published the article: Metalâ•fiinsulatorâ•fisemiconductor electrostatics of carbon nanotubes, in the Journal: (JOURNAL) of 19/08/2002
- what: On the right axis, the authors compare the charge for a single tube in a planar geometry, case 共i兲 in Fig 1, to that in a coaxial geometry. The authors show that the planar nanotube capacitors offer comparable performance to the silicon MOS capacitors, but the coaxial gate geometry promises significantly higher performance.
SUMMARY
The carbon nanotube field-effect transistor 共CNTFET兲1 . . .
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