High lateral breakdown voltage in thin channel algan/gan high electron mobility transistors on aln/sapphire templates

HIGHLIGHTS

• who: Idriss Abid and collaborators from the CNRS-CRHEA, University Côte d'Azur, rue Bernard Grégory, Valbonne, France have published the article: High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates, in the Journal: (JOURNAL)
• what: __SECTION__ 4. Conclusions.
• future: Experiments such asinInfrared/Raman confirm the thermal improvement. thermography wouldstability be needed to fully confirm the thermal stability improvement. ◦ C to 300 ◦ C) +10VVasasaafunction functionof oftemperature temperature(from (from 150 150 °C Figure 7.

SUMMARY

AlGaN/GaN high-electron . . .

 



If you want to have access to all the content you need to log in!

Thanks :)

Username or Email

Password

Remember me

Lost your password?

If you don't have an account, you can create one here.