Ku-band 50 w gan hemt power amplifier using asymmetric power combining of transistor cells

HIGHLIGHTS

  • who: Seil Kim et al. from the Department of Radio Science and Engineering, Chungnam National University, Daejeon, Korea have published the paper: Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells, in the Journal: (JOURNAL)

SUMMARY

    Conventional radar systems used traveling wave tubes, magnetrons, or klystrons to obtain high output power, but they had the disadvantages of a high operating voltage, large size, a short lifetime, and low reliability. A GaN high electron mobility transistor (HEMT), which features a low operating voltage, easy maintenance, a small form . . .

     

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