Indian journal of science and technology

HIGHLIGHTS

  • who: Morphology et al. from the Department of Physics, Sri Venkateswara University, Tirupati-517502, AP, India have published the article: INDIAN JOURNAL OF SCIENCE AND TECHNOLOGY, in the Journal: (JOURNAL)
  • what: The authors show the peak positions and regions under the curves for comparing nickel and oxygen oxidation states in Tables 1 and 2.

SUMMARY

    Magnetoresistance (MR), the resistance change caused by a magnetic_field, is significant for data storage, spin-valve devices, and other spintronic devices. The spin-electron scattering is reduced by the parallel alignment of FM moments along the . . .

     

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