HIGHLIGHTS
- who: GaN-on-diamond substrate et al. from the LaboratoryJiaotong University, Xi'an, PR. China have published the Article: FEM thermal and stress analysis of bonded GaN-on-diamond substrate, in the Journal: (JOURNAL) of 10/07/2017
- what: One of the main reasons for these issues is that GaN-based devices will produce a lot of heat while operating, but cannot dissipate these a Zhai et_al AIP Advances 7, 095105 heat fast and effectively. The stress distribution under different conditions is also simulated in this paper using FEM which is implemented in COMSOL Multiphysics . . .
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