HIGHLIGHTS
- who: C. Licitra and collaborators from the CEA LETI, MINATEC, rue des Martyrs, Grenoble, France have published the research: Evaluation of ellipsometric porosimetry for in-line characterization of ultra low- dielectrics, in the Journal: (JOURNAL)
- what: The authors focus the capabilities of EP to characterize ULK materials and their integration processes.
SUMMARY
Complementary metal oxide semiconductor (CMOS) down scaling requires new materials for advanced interconnects to reduce resistancecapacitance delay. The pore structure affects the material properties (mechanical strength, species diffusion through the pore network, moisture uptake…). Based on spectroscopic ellipsometry measurements . . .
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