Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ito/sio2/si stack

HIGHLIGHTS

• who: T. Kamioka et al. from the Technological Institute, Nagoya, Aichi, Japan University, Kawasaki, Kanagawa, Japan have published the Article: Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack, in the Journal: (JOURNAL) of 15/09/2017
• what: The interface workfunction of ITO and the process-induced damage during reactive-plasma deposition (RPD) of ITO for the ITO/SiO2 /Si stack were extracted by C-V analysis.
• how: As Chf the value obtained at 100 kHz is used in the experiments although the 100 kHz C . . .
  

   

  

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