HIGHLIGHTS
- who: Spectroscopic Ellipsometry and collaborators from the Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, College of Chemistry and Chemical Engineering, Guangxi University, Nanning, China have published the research: Effects of Thermal Annealing on Optical Properties of Be-Implanted GaN Thin Films by, in the Journal: (JOURNAL)
- what: The studies showed that Be-doped GaN was slight p-type conductivity because BeGa is a deep acceptor (EV + 0.55 eV) . In this paper, a series of Be-implanted GaN thin films with different RTA processes were investigated by variable angle . . .
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