Oscillations in based

HIGHLIGHTS

• who: SiC MOSFET and collaborators from the (UNIVERSITY) have published the article: Oscillations in Based, in the Journal: Energies 2018, 11, xFigure FOR PEER REVIEW 13. Experimental gate-source voltage waveform of low-side MOSFET. of /2018/
• what: The recent research focuses on the gate driver design for SiC MOSFET to enable the high switching speed, also featuring the damping of parasitic resonance and crosstalk suppression . In this paper, a gate driver is proposed for SiC MOSFET to suppress the crosstalk phenomena by a negative level shifting of the gate voltage using a parallel connected . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.