O-band emitting inas quantum dots grown by mocvd on a 300 mm ge-buffered si (001) substrate

HIGHLIGHTS

• who: Oumaima Abouzaid et al. from the UnivGrenoble Alpes, CNRS, CEA-Leti, Grenoble INP, LTM, Grenoble, France have published the research work: O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate, in the Journal: (JOURNAL)
• what: The authors report the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown quasi-nominal Ge/Si(001) and GaAs(001) substrates.
• future: A more prospective way could be the integration of III-V semiconductors directly on silicon Nanomaterials 2020 10 . . .
  

   

  

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