HIGHLIGHTS
- who: Lutz Baumgarten and collaborators from the Institut u00fc lich, Germany have published the research: Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films, in the Journal: (JOURNAL)
SUMMARY
ALD-grown HfO2 thin films can contain a significant amount of impurities like carbon or nitrogen if the decomposition of the precursor gas in ozone was incomplete or removed ligands readsorb on the surface. Oxygen vacancies are recognized as those defects, which have a positive impact on the stabilization of the ferroelectric orthorhombic phase in undoped HfO2.4-6 . . .
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