关于 ga o /al ga n 同型异质结的双波段、 双模式紫外探测性能分析

HIGHLIGHTS

  • who: uff1a and colleagues from the Nanjing University of Posts and Telecommunications, Nanjing, China) have published the paper: u5173u4e8e Ga O /Al Ga N u540cu578bu5f02u8d28u7ed3u7684u53ccu6ce2u6bb5u3001 u53ccu6a21u5f0fu7d2bu5916u63a2u6d4bu6027u80fdu5206u6790, in the Journal: (JOURNAL)
  • what: Except for the characterizations of the materials and photodetector, in the end of this paper, the operating mechanism of the dual-band dual-mode heterojunction PD is analyzed through its heterogeneous energy-band diagram.

SUMMARY

    Developing self-powered DUV PDs and excavating the inherent mechanism seem seriously crucial to achieving further actual applications. In the field of DUV photodetection, Ga2O3 . . .

     

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