HIGHLIGHTS
- who: uff1a et al. from the (UNIVERSITY) have published the research work: AlN/ b -Ga O u5f02u8d28u7ed3u7535u5b50u8f93u8fd0u673au5236, in the Journal: (JOURNAL)
SUMMARY
The b-Ga2O3 has received much attention in the field of power and radio frequency electronics, due to an ultrawide bandgap energy of ~4.9 eV and a high breakdown field strength of ~8 MV/ cm (Poncé et al, 2020 Physical Review Research. The in-plane lattice mismatch of 2.4% between the plane of bGa2O3 and the plane of wurtzite AlN is beneficial to the formation of an AlN/b . . .
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