Inaln/gan hemt with n+gan contact ledge structure for millimeter-wave low voltage applications

HIGHLIGHTS

• who: Can Gong and collaborators from the (UNIVERSITY) have published the article: InAlN/GaN HEMT with n+GaN Contact Ledge Structure for Millimeter-wave Low Voltage Applications, in the Journal: (JOURNAL)

SUMMARY

TiN-based and n+GaN cap contact ledge structures have been used to provide a current path between the contact ledge and the 2DEG channel to further increase the maximum output current densit [12]. Based on the above, regrown InAlN/GaN HEMT with n+GaN contact ledge structure has been fabricated by regrown ohmic contact and self-stopping etching technology in . . .

 



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