Impact of inherent design limitations for cu–sn slid microbumps on its electromigration reliability for 3d ics

HIGHLIGHTS

• who: D ICs et al. from the Automation, Aalto University, Otaniemi, Espoo, Finland (e-mail: have published the paper: Impact of Inherent Design Limitations for Cuu2013Sn SLID Microbumps on Its Electromigration Reliability for 3D ICs, in the Journal: (JOURNAL)
• what: In this work, the two-bump test structures, which were investigated, were of two lateral dimensions, i.e., 25 and 50 u03bcm. In this work, the wafer-level Cu-Sn SLID bonding process was demonstrated by incorporating various test structures.
• how: The test structures were tested for its EM reliability to study different . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.