Effects of charge trapping on memory characteristics for hfo2-based ferroelectric field effect transistors

HIGHLIGHTS

• who: Jianjian Wang and collaborators from the Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China School of Microelectronics, University of Chinese Academy of Sciences, Beijing, China have published the Article: Effects of Charge Trapping on Memory Characteristics for HfO2-Based Ferroelectric Field Effect Transistors, in the Journal: Nanomaterials 2023, 638 of /2023/
• what: The significant difference between the IDD-VGG curves under the PGM PGM and and ERS indicates that the depolarization field is delay the ERS pulses pulseswith withthe theincrease increaseininTT delay indicates that the depolarization field not the main reason for the . . .
  

   

  

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