HIGHLIGHTS
- who: Q. Li and collaborators from the School of Automation and Information Engineering, Xi`an University of Technology, Xi`an, China have published the research work: Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM, in the Journal: (JOURNAL)
- what: In this work, an AlGaN/AlN/GaN heterostructure was grown by MOCVD on c-plane sapphire, and the quantitative chemical composition in the AlN interlayer was determined using the Molina method at atomic-column resolution by analyzing HAADF image intensity without simulation.
- how . . .
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