HIGHLIGHTS
- who: Conal E. Murray from the Laboratory have published the paper: Mapping of the mechanical response in Si/SiGe nanosheet device geometries, in the Journal: (JOURNAL) of 10/01/2022
- what: The authors report the measurement of the strain of Si/SiGe nanosheets designed for gate-all-around FETs where two distinct elastic relaxation mechanisms were directly observed within the nanosheets with a spatial resolution of approximately 12 nm.
- future: This study sheds light on the mechanical response of complex nanostructures that can be visualized at extremely fine dimensions as deviations in the . . .
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