HIGHLIGHTS
- who: Mingyue Shao and collaborators from the State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences have published the research work: Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications, in the Journal: Nanomaterials 2023, 13, 633. of /2023/
- what: In this research as a high-speed and good thermal stability material Ta was proposed to be doped in Sb3 Te1 alloy to improve the phase transition performance . . .
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