Numerical investigation of gan hemt terahertz detection model considering multiple scattering mechanisms

HIGHLIGHTS

• who: Qingzhi Meng et al. from the State Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi`an Jiaotong University, Xi`an, China have published the article: Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms, in the Journal: Nanomaterials 2023, 632 of /2023/
• what: In this paper a response voltage model for a GaN HEMT THz detector that considers the carrier in a GaN/AlGaN heterostructure is proposed.
• how: A comparison between the model and the reported models shows that the proposed model is more accurate. The authors compared the . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.