应变和电场对 ga sete/in se 异质结电子结构和光学性质的 影响

HIGHLIGHTS

  • who: liang from the Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University have published the research: u5e94u53d8u548cu7535u573au5bf9 Ga SeTe/In Se u5f02u8d28u7ed3u7535u5b50u7ed3u6784u548cu5149u5b66u6027u8d28u7684 u5f71u54cd, in the Journal: (JOURNAL)

SUMMARY

    Stacking two-dimensional materials into heterogeneous structures is an effective strategy to regulate their physical properties and enrich their applications in modern nanoelectronics. The electronic structure and optical properties of a new two-dimensional Janus Ga2SeTe/In2Se3 heterojunction with four stacked configurations are investigated by first principles calculations. The heterojunction of the four configurations is an indirect band-gap semiconductor with . . .

     

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