HIGHLIGHTS
SUMMARY
ILICON carbide (SiC) has recently gained interest in power electronics applications due to its superior material properties over silicon. The degradation of gate oxide and drain leakage in SiC power devices due to heavy ion and neutron impact has been reported in several studies -[11]. The proton induced SEB -[14] and parameter degradation, in SiC power devices have been observed but those studies do not take into account the effect of proton irradiation on the long-term reliability of the devices. The reliability tests for devices that have survived atmospheric neutron irradiation have shown . . .
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