HIGHLIGHTS
- who: Yu-Chun Chen and colleagues from the Graduated Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan have published the research work: Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes, in the Journal: Materials 2023, 16, 1667. of /2023/
- what: The authors report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a separate absorption grading charge and multiplication In0.53 Ga0.47 As/InP photodiode to prevent premature edge breakdowns. The authors show that when the spacing is longer . . .
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